Difference between revisions of "User:Cov"

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imported>Cov
imported>Cov
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Next step: document material and process choice, investigate printing, inert substrate
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=Materials and Processes=
 
{| border="1"
 
{| border="1"
 
|-
 
|-
 
! Material
 
! Material
 
! Doping Process
 
! Doping Process
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! Notice
 
|-
 
|-
 
| Silicon
 
| Silicon
| Particle acceleration
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| Mix in during boule creation and ion implantation (particle acceleration with phosphorus or arsenic and boron or gallium) or furnace with gas (diffusion)
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| Need at least 10 kEv. Heat treatment for recrystallization (electrical activation) afterwards. Silicon dioxide mask for gas
 
|-
 
|-
 
| Organic semiconductors
 
| Organic semiconductors
| Beaker chemistry
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| Beaker chemistry, dissolve into solvent
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|
 
|-
 
|-
 
| Graphene
 
| Graphene
| Doping during formation
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| Doping during furnace and gas formation
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|-
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| Zinc sulfide
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|
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|-
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| 2-6 semiconductors
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| Beaker chemistry, small particle slurry
 
|-
 
|-
 
|}
 
|}
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=Conductor=
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* Carbon, gold don't oxidize
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* Aluminum, silver, copper
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=Recycling=
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* Electroplating to recover metals (different voltages for different metals)/
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* Size-selective precipitation technique if p, n had different sizes
 +
* Selective etches
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* Focused ion beams to bombard off surface

Revision as of 15:49, 25 January 2011

Next step: document material and process choice, investigate printing, inert substrate

Materials and Processes

Material Doping Process Notice
Silicon Mix in during boule creation and ion implantation (particle acceleration with phosphorus or arsenic and boron or gallium) or furnace with gas (diffusion) Need at least 10 kEv. Heat treatment for recrystallization (electrical activation) afterwards. Silicon dioxide mask for gas
Organic semiconductors Beaker chemistry, dissolve into solvent
Graphene Doping during furnace and gas formation
Zinc sulfide
2-6 semiconductors Beaker chemistry, small particle slurry

Conductor

  • Carbon, gold don't oxidize
  • Aluminum, silver, copper

Recycling

  • Electroplating to recover metals (different voltages for different metals)/
  • Size-selective precipitation technique if p, n had different sizes
  • Selective etches
  • Focused ion beams to bombard off surface