Difference between revisions of "User:Cov"
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− | + | W5: Undecided between (semi) conductor in polymer, some in the polymer, some wet, all wet with resins/binders, and all wet with just hot plastic making everything stick in place. | |
− | + | ||
− | + | W4: For variability, shelf-life (oxidation) and constant deposit rate are key. Test patterns on silicon for after-the-fact. Resistance testing is useful/common. Laser cutter can oblate/cut sections and rely on a redundant section. Acid etching may be possible. Heating and removal may be possible. "MISFET" metal-insulator semiconductor field effect transistor. Schottky diode--metal (Schottky)-semiconductor-metal (ohmic) sandwich. Work function of metal versus electron affinity in semiconductors essentially the same. Bonds covalent. Electrons move into metal and becomes less [pn]-type. Barrier forms where electrons left and voltage happens. Difference in other direction causes flow of electrons and ohmic contact. Can either vary metal or doping. Lookup leaky / Schottky diodes versus regular pn-junction. Schottky transistors also possible. | |
− | + | ||
− | + | In the end we want CMOS to save material. NAND CMOS is 4 transistors. TTL has 3 transistors and 4 resistors. Also, CMOS has much better fanout. Look into verilog/VHDL output. | |
+ | |||
+ | For Thursday: carbon. Keep thinking about deposition method. Get transparencies from John. | ||
+ | |||
+ | W3: Deposition method. Automatic dropper? Like an aquarium pump but very small. Called automated pipettes. Sticking to the sides depends on the charge, but Meehan hasn't encountered problems--gold and cadmium sulfide don't. | ||
+ | |||
+ | W2: Carbon as the Conductor material (and potentially resistors, capacitors and inductors) | ||
+ | Step 1: Put a wire on a substrate (paste or liquid preferable to powder) | ||
+ | |||
+ | W1: document material and process choice, investigate printing, inert substrate | ||
+ | |||
+ | =Materials and Processes= | ||
+ | {| border="1" | ||
+ | |- | ||
+ | ! Material | ||
+ | ! Doping Process | ||
+ | ! Notice | ||
+ | |- | ||
+ | | Silicon | ||
+ | | Mix in during boule creation and ion implantation (particle acceleration with phosphorus or arsenic and boron or gallium) or furnace with gas (diffusion) | ||
+ | | Need at least 10 kEv. Heat treatment for recrystallization (electrical activation) afterwards. Silicon dioxide mask for gas | ||
+ | |- | ||
+ | | Organic semiconductors | ||
+ | | Beaker chemistry, dissolve into solvent | ||
+ | | | ||
+ | |- | ||
+ | | Graphene | ||
+ | | Doping during furnace and gas formation | ||
+ | |- | ||
+ | | Zinc sulfide | ||
+ | | | ||
+ | |- | ||
+ | | 2-6 semiconductors | ||
+ | | Beaker chemistry, small particle slurry | ||
+ | |- | ||
+ | |} | ||
+ | |||
+ | =Conductor= | ||
+ | * Carbon, gold don't oxidize | ||
+ | * Aluminum, silver, copper | ||
+ | |||
+ | =Recycling= | ||
+ | * Electroplating to recover metals (different voltages for different metals)/ | ||
+ | * Size-selective precipitation technique if p, n had different sizes | ||
+ | * Selective etches | ||
+ | * Focused ion beams to bombard off surface |
Revision as of 05:07, 7 November 2013
W5: Undecided between (semi) conductor in polymer, some in the polymer, some wet, all wet with resins/binders, and all wet with just hot plastic making everything stick in place.
W4: For variability, shelf-life (oxidation) and constant deposit rate are key. Test patterns on silicon for after-the-fact. Resistance testing is useful/common. Laser cutter can oblate/cut sections and rely on a redundant section. Acid etching may be possible. Heating and removal may be possible. "MISFET" metal-insulator semiconductor field effect transistor. Schottky diode--metal (Schottky)-semiconductor-metal (ohmic) sandwich. Work function of metal versus electron affinity in semiconductors essentially the same. Bonds covalent. Electrons move into metal and becomes less [pn]-type. Barrier forms where electrons left and voltage happens. Difference in other direction causes flow of electrons and ohmic contact. Can either vary metal or doping. Lookup leaky / Schottky diodes versus regular pn-junction. Schottky transistors also possible.
In the end we want CMOS to save material. NAND CMOS is 4 transistors. TTL has 3 transistors and 4 resistors. Also, CMOS has much better fanout. Look into verilog/VHDL output.
For Thursday: carbon. Keep thinking about deposition method. Get transparencies from John.
W3: Deposition method. Automatic dropper? Like an aquarium pump but very small. Called automated pipettes. Sticking to the sides depends on the charge, but Meehan hasn't encountered problems--gold and cadmium sulfide don't.
W2: Carbon as the Conductor material (and potentially resistors, capacitors and inductors) Step 1: Put a wire on a substrate (paste or liquid preferable to powder)
W1: document material and process choice, investigate printing, inert substrate
Materials and Processes
Material | Doping Process | Notice |
---|---|---|
Silicon | Mix in during boule creation and ion implantation (particle acceleration with phosphorus or arsenic and boron or gallium) or furnace with gas (diffusion) | Need at least 10 kEv. Heat treatment for recrystallization (electrical activation) afterwards. Silicon dioxide mask for gas |
Organic semiconductors | Beaker chemistry, dissolve into solvent | |
Graphene | Doping during furnace and gas formation | |
Zinc sulfide | ||
2-6 semiconductors | Beaker chemistry, small particle slurry |
Conductor
- Carbon, gold don't oxidize
- Aluminum, silver, copper
Recycling
- Electroplating to recover metals (different voltages for different metals)/
- Size-selective precipitation technique if p, n had different sizes
- Selective etches
- Focused ion beams to bombard off surface