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User:Cov

Revision as of 15:22, 15 February 2011 by imported>Cov

W4: For variability, shelf-life (oxidation) and constant deposit rate are key. Test patterns on silicon for after-the-fact. Resistance testing is useful/common. Laser cutter can oblate/cut sections and rely on a redundant section. Acid etching may be possible. Heating and removal may be possible. "MISFET" metal-insulator semiconductor field effect transistor.

W3: Deposition method. Automatic dropper? Like an aquarium pump but very small. Called automated pipettes. Sticking to the sides depends on the charge, but Meehan hasn't encountered problems--gold and cadmium sulfide don't.

W2: Carbon as the Conductor material (and potentially resistors, capacitors and inductors) Step 1: Put a wire on a substrate (paste or liquid preferable to powder)

W1: document material and process choice, investigate printing, inert substrate

Materials and Processes

Material Doping Process Notice
Silicon Mix in during boule creation and ion implantation (particle acceleration with phosphorus or arsenic and boron or gallium) or furnace with gas (diffusion) Need at least 10 kEv. Heat treatment for recrystallization (electrical activation) afterwards. Silicon dioxide mask for gas
Organic semiconductors Beaker chemistry, dissolve into solvent
Graphene Doping during furnace and gas formation
Zinc sulfide
2-6 semiconductors Beaker chemistry, small particle slurry

Conductor

  • Carbon, gold don't oxidize
  • Aluminum, silver, copper

Recycling

  • Electroplating to recover metals (different voltages for different metals)/
  • Size-selective precipitation technique if p, n had different sizes
  • Selective etches
  • Focused ion beams to bombard off surface