Open main menu

Linux and Unix Users Group at Virginia Teck Wiki β

Changes

User:Cov

801 bytes added, 15:49, 25 January 2011
no edit summary
Next step: document material and process choice, investigate printing, inert substrate
 
=Materials and Processes=
{| border="1"
|-
! Material
! Doping Process
! Notice
|-
| Silicon
| Particle Mix in during boule creation and ion implantation (particle accelerationwith phosphorus or arsenic and boron or gallium) or furnace with gas (diffusion)| Need at least 10 kEv. Heat treatment for recrystallization (electrical activation) afterwards. Silicon dioxide mask for gas
|-
| Organic semiconductors
| Beaker chemistry, dissolve into solvent|
|-
| Graphene
| Doping during furnace and gas formation|-| Zinc sulfide| |-| 2-6 semiconductors| Beaker chemistry, small particle slurry
|-
|}
 
=Conductor=
* Carbon, gold don't oxidize
* Aluminum, silver, copper
 
=Recycling=
* Electroplating to recover metals (different voltages for different metals)/
* Size-selective precipitation technique if p, n had different sizes
* Selective etches
* Focused ion beams to bombard off surface
Anonymous user